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1/15 ? semiconductor MSM51V65805 description the MSM51V65805 is a 8,388,608-word 8-bit dynamic ram fabricated in oki's silicon-gate cmos technology. the MSM51V65805 achieves high integration, high-speed operation, and low-power consumption because oki manufactures the device in a quadruple-layer polysilicon/double-layer metal cmos process. the MSM51V65805 is available in a 32-pin plastic soj or 32-pin plastic tsop. features ? 8,388,608-word 8-bit configuration ? single 3.3 v power supply, 0.3 v tolerance ? input : lvttl compatible, low input capacitance ? output : lvttl compatible, 3-state ? refresh : ras -only refresh : 4096 cycles/64 ms cas before ras refresh, hidden refresh : 4096 cycles/64 ms ? fast page mode with edo, read modify write capability ? cas before ras refresh, hidden refresh, ras -only refresh capability ? package options: 32-pin 400 mil plastic soj (soj32-p-400-1.27) (product : MSM51V65805-xxjs) 32-pin 400 mil plastic tsop (tsopii32-p-400-1.27-k) (product : MSM51V65805-xxts-k) xx indicates speed rank. product family ? semiconductor MSM51V65805 8,388,608-word 8-bit dynamic ram : fast page mode type with edo 84 ns 504 mw family access time (max.) cycle time (min.) standby (max.) power dissipation MSM51V65805-50 t rac 50 ns t aa 25 ns t cac 13 ns t oea 13 ns MSM51V65805-60 60 ns 104 ns 432 mw 30 ns 15 ns 15 ns operating (max.) 1.8 mw e2g1016-17-42 this version: jan. 1998 previous version: may 1997
2/15 ? semiconductor MSM51V65805 pin configuration (top view) 3 4 5 9 10 11 12 13 dq2 dq3 dq4 ras a0 a1 a2 a3 30 29 28 24 23 22 21 20 dq7 dq6 dq5 nc a11r a10 a9 a8 2 dq1 31 dq8 1 v cc 32 v ss 32-pin plastic soj 3 4 5 9 10 11 12 13 30 29 28 24 23 22 21 20 2 31 1 32 32-pin plastic tsop (k type) 6 nc 27 v ss 27 8 we 25 oe 25 6 8 7 v cc 26 cas 26 7 14 a4 19 a7 14 19 dq2 dq3 dq4 ras a0 a1 a2 a3 dq1 v cc nc we v cc a4 dq7 dq6 dq5 nc a11r a10 a9 a8 dq8 v ss v ss oe cas a7 pin name function a0 - a10, a11r address input ras row address strobe cas column address strobe dq1 - dq8 data input/data output oe output enable we write enable v cc power supply (3.3 v) nc no connection 15 a5 18 a6 15 18 16 v cc 17 v ss 16 17 a5 v cc a6 v ss v ss ground (0 v) note : the same power supply voltage must be provided to every v cc pin, and the same gnd voltage level must be provided to every v ss pin.
3/15 ? semiconductor MSM51V65805 block diagram timing generator refresh control clock column address buffers internal address counter row address buffers row deco- ders word drivers memory cells sense amplifiers column decoders i/o controller i/o selector output buffers input buffers on chip v bb generator on chip iv cc generator v cc dq1 - dq8 cas we a0 - a10 11 11 8 8 8 8 88 12 11 oe ras v ss 1 a11r
4/15 ? semiconductor MSM51V65805 electrical characteristics absolute maximum ratings recommended operating conditions capacitance *: ta = 25 c voltage on any pin relative to v ss short circuit output current power dissipation operating temperature storage temperature v t symbol i os p d * t opr t stg C0.5 to 4.6 50 1 0 to 70 C55 to 150 rating ma w c c parameter v unit power supply voltage input high voltage input low voltage v cc symbol v ss v ih v il 3.3 0 typ. parameter 3.0 0 2.0 C0.3 min. 3.6 0 v cc + 0.3 0.8 max. (ta = 0c to 70c) v unit v v v input capacitance (a0 - a10, a11r) input capacitance ( ras , cas , we , oe ) output capacitance (dq1 - dq8) c in1 symbol c in2 c i/o 5 7 7 max. pf unit pf pf parameter (v cc = 3.3 v 0.3 v, ta = 25c, f = 1 mhz) typ.
5/15 ? semiconductor MSM51V65805 dc characteristics notes : 1. i cc max. is specified as i cc for output open condition. 2. the address can be changed once or less while ras = v il . 3. the address can be changed once or less while cas = v ih . parameter symbol condition MSM51V65805 -60 MSM51V65805 -50 (v cc = 3.3 v 0.3 v, ta = 0c to 70c) i oh = C2.0 ma output high voltage i ol = 2.0 ma output low voltage 0 v v i v cc + 0.3 v; all other pins not input leakage current under test = 0 v dq disable output leakage current 0 v v o v cc ras , cas cycling, average power t rc = min. supply current (operating) ras , cas = v ih power supply ras , cas current (standby) ras cycling, average power cas = v ih , supply current t rc = min. ( ras -only refresh) ras = v ih , power supply cas = v il , current (standby) dq = enable average power cas before ras supply current ( cas before ras refresh) ras = v il , average power cas cycling, supply current t hpc = min. (fast page mode) v oh v ol i li i lo i cc1 i cc2 i cc3 i cc5 i cc6 i cc7 3 v cc C0.2 v min. 2.4 0 C10 C10 max. v cc 0.4 10 10 120 1 0.5 120 5 120 120 min. 2.4 0 C10 C10 max. v cc 0.4 10 10 140 1 0.5 140 5 140 140 unit v v m a m a ma ma ma ma ma ma note 1, 2 1 1, 2 1 1, 2 1, 3 ras cycling,
6/15 ? semiconductor MSM51V65805 ac characteristics (1/2) parameter MSM51V65805 -60 MSM51V65805 -50 (v cc = 3.3 v 0.3 v, ta = 0c to 70c) note 1, 2, 3 random read or write cycle time read modify write cycle time fast page mode cycle time fast page mode read modify write cycle time access time from ras access time from cas access time from column address access time from cas precharge cas to data output buffer turn-off delay time transition time ras precharge time ras pulse width ras pulse width (fast page mode with edo) ras hold time cas pulse width cas hold time ras to cas delay time ras to column address delay time cas to ras precharge time row address set-up time row address hold time column address set-up time column address hold time column address to ras lead time access time from oe oe to data output buffer turn-off delay time refresh period ras hold time referenced to oe unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns ras hold time from cas precharge symbol t rc t rwc t hpc t hprwc t rac t cac t aa t cpa t cez t t t rp t ras t rasp t rsh t cas t csh t rcd t rad t crp t asr t rah t asc t cah t ral t oea t oez t ref t roh t rhcp note 4, 5, 6 4, 5 4, 6 4 7, 8 5 6 4 7 3 output low impedance time from cas ns t clz 4 cas precharge time (fast page mode with edo) ns t cp ns data output hold after cas low we to data output buffer turn-off delay time ras to data output buffer turn-off delay time ns ns ns t doh t wez t rez 7, 8 7 oe hold time from cas (dq disable) ns min. 84 110 20 58 0 1 30 50 50 7 7 35 11 9 5 0 7 0 7 25 0 7 0 7 30 5 0 0 5 max. 50 13 25 30 13 50 10,000 100,000 10,000 37 25 13 13 64 13 13 t cho min. 104 135 25 68 0 1 40 60 60 10 10 40 14 12 5 0 10 0 10 30 0 10 0 10 35 5 0 0 5 max. 60 15 30 35 15 50 10,000 100,000 10,000 45 30 15 15 64 15 15
7/15 ? semiconductor MSM51V65805 ac characteristics (2/2) MSM51V65805 -60 MSM51V65805 -50 write command pulse width write command to cas lead time write command to ras lead time data-in set-up time cas to we delay time ras to we delay time column address to we delay time ras to cas hold time ( cas before ras ) cas active delay time from ras precharge data-in hold time write command hold time oe command hold time oe to data-in delay time (v cc = 3.3 v 0.3 v, ta = 0c to 70c) note 1, 2, 3 write command set-up time t wp t cwl t rwl t ds t cwd t rwd t awd t chr t rpc t dh t wch t oeh t oed t wcs parameter symbol ns ns ns ns ns ns ns ns ns ns ns ns ns ns unit note 11 10 10 10 11 10 ras to cas set-up time ( cas before ras )t csr ns we to ras precharge time ( cas before ras ) t wrp ns we hold time from ras ( cas before ras )t wrh ns cas precharge we delay time t cpwd 10 ns read command set-up time read command hold time read command hold time referenced to ras ns ns ns t rcs t rch t rrh 9 9 oe precharge time we pulse width (dq disable) t oep t wpe ns ns oe command hold time t och min. 10 10 10 0 34 79 49 10 5 10 10 10 15 0 5 10 10 54 0 0 0 10 10 10 max. ns min. 7 7 7 0 30 67 42 10 5 7 7 7 13 0 5 10 10 47 0 0 0 7 7 7 max.
8/15 ? semiconductor MSM51V65805 notes: 1. a start-up delay of 200 m s is required after power-up, followed by a minimum of eight initialization cycles ( ras -only refresh or cas before ras refresh) before proper device operation is achieved. 2. the ac characteristics assume t t = 2 ns. 3. v ih (min.) and v il (max.) are reference levels for measuring input timing signals. transition times (t t ) are measured between v ih and v il . 4. this parameter is measured with a load circuit equivalent to 1 ttl load and 100 pf. the output timing reference levels are v oh = 2.0 v and v ol = 0.8 v. 5. operation within the t rcd (max.) limit ensures that t rac (max.) can be met. t rcd (max.) is specified as a reference point only. if t rcd is greater than the specified t rcd (max.) limit, then the access time is controlled by t cac . 6. operation within the t rad (max.) limit ensures that t rac (max.) can be met. t rad (max.) is specified as a reference point only. if t rad is greater than the specified t rad (max.) limit, then the access time is controlled by t aa . 7. t cez (max.), t rez (max.), t wez (max.) and t oez (max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. 8. t cez and t rez must be satisfied for open circuit condition. 9. t rch or t rrh must be satisfied for a read cycle. 10. t wcs , t cwd , t rwd , t awd and t cpwd are not restrictive operating parameters. they are included in the data sheet as electrical characteristics only. if t wcs 3 t wcs (min.), then the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. if t cwd 3 t cwd (min.) , t rwd 3 t rwd (min.), t awd 3 t awd (min.) and t cpwd 3 t cpwd (min.), then the cycle is a read modify write cycle and data out will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, then the condition of the data out (at access time) is indeterminate. 11. these parameters are referenced to the cas leading edge in an early write cycle, and to the we leading edge in an oe control write cycle, or a read modify write cycle.
9/15 ? semiconductor MSM51V65805 "h" or "l" ras cas v ih v il C C v ih v il C C dq v oh v ol C C address v ih v il C C we v ih v il C C oe v ih v il C C t rc t ras t rp t crp t csh t crp t rcd t rsh t cas t rad t asr t rah t asc t cah t ral row column t rcs t rrh t rch t aa t roh t oea t cac t rac t oez t cez open t clz valid data-out t rez "h" or "l" ras cas v ih v il C C v ih v il C C dq v ih v il C C address v ih v il C C we v ih v il C C oe v ih v il C C t rc t ras t rp t crp t rcd t csh t rsh t crp t cas t rad t rah t asr t asc t cah row column t wcs t wch t ds t dh valid data-in t wp t ral open t rwl t cwl timing waveform read cycle write cycle (early write) e2g0115-17-41s
10/15 ? semiconductor MSM51V65805 read modify write cycle "h" or "l" ras cas v ih v il C C v ih v il C C dq v i/oh v i/ol C C address v ih v il C C we v ih v il C C oe v ih v il C C t rwc t ras t rp t crp t csh t rcd t crp t rsh t cas t asr t rah t asc t cah row column t cwd t cwl t rwd t rwl t wp t aa t awd t oea t oed t cac t rac t oez t ds t dh t clz valid data-out valid data-in t rad t rcs t oeh
11/15 ? semiconductor MSM51V65805 fast page mode read cycle (part-1) fast page mode read cycle (part-2) C C C C C C C C v ih ras address we dq cas oe C C C C v il v ih v il v ih v il v ih v il v ih v il v oh v ol row column t crp t crp t rp t rasp t cas t csh "h" or "l" column column t rcd t cp t cas t cas t hpc t cp t cah t asc t rad t rcs t rch t rac t aa t cac t clz t wez t oea valid data-out valid data-out valid data-out t rah t asr t cah t asc t cah t asc t cac t aa t doh t cez t cpa t aa t cac t rcs t wpe t rhcp e e e e e e e e v ih ras address we dq cas oe C C C C v il v ih v il v ih v il v ih v il v ih v il v oh v ol row column t crp t rp t rasp t cas t csh "h" or "l" column column t rcd t cp t cas t cas t hpc t cah t rad t rcs t aa t rrh t cac t clz t cpa t oea valid data-out valid* data-out t rah t asr t cah t asc t cah t asc t rac valid data-out t aa t cac t doh valid* data-out t cac t rez t oez t oez t cho t och t aa t oea t oep t oep t oea * : same data, t cp t rhcp t asc
12/15 ? semiconductor MSM51V65805 fast page mode write cycle (early write) fast page mode read modify write cycle C C C C C C C C v ih ras address we dq cas oe C C C C v il v ih v il v ih v il v ih v il v ih v il v i/oh v i/ol t asr row column t rasp t cwd t rah column t rcd t cp t asc t cah t cpa t asc t rad t rwd "h" or "l" valid data-out t oez t oed t ds t wp t awd t rcs t cwd t rwl t cac t awd t rac t wp t clz t dh t oeh valid data-in t oea valid data-out t oez t oed t cac t dh t oeh valid data-in t oea t clz t ds t aa t aa t rcs t cah t cpwd t hprwc t crp t cwl e e e e e e e e v ih ras address we dq cas oe C C C C v il v ih v il v ih v il v ih v il v ih v il v ih v il t asr row column t crp t rp t rasp t cas t csh t rah column column t rcd t cp t cas t cas t hpc t cp t hpc t asc t cah t cah t cah t asc t asc t rad "h" or "l" t dh t ds t wch valid data-in t ds t dh t ds t dh t wch t wch t rsh valid data-in valid data-in t wcs t wcs t wcs
13/15 ? semiconductor MSM51V65805 ras -only refresh cycle cas before ras refresh cycle ras cas v ih v il C C v ih v il C C address v ih v il C C t rc t ras t rp t crp t rpc t asr t rah row dq v oh v ol e e note: we , oe = "h" or "l" t cez open \ ] "h" or "l" - 9 b c d e > ? v ih v il ras t rp C C cas v ih v il C C v ih v il we v v "h" or "l" t rc t ras t rpc t chr t rp t rpc t cp t csr t wrp t wrh t cez t wrp open C C ol oh C C dq note: oe , address = "h" or "l"
14/15 ? semiconductor MSM51V65805 hidden refresh read cycle hidden refresh write cycle C C C C C C C C v ih ras address we dq cas oe C C C C v il v ih v il v ih v il v ih v il v ih v il v ih v il "h" or "l" t asr row column t crp t rc t asc t rp t ras t rcd t rsh t rad t cah t rah t ral t rwl t chr t ras t rc t rp t ds t wp t wch t dh valid data-in t wcs ras cas address oe v ih v il C C v ih v il C C v ih v il C C v ih v il C C "h" or "l" we v ih v il C C dq v oh v ol C C t rc t rc t ras t rp t ras t rp t crp t rcd t rsh t chr t rad t asr t rah t asc t cah row column t rcs t ral t rrh t aa t roh t oea t cac t rac t clz t oez valid data-out open t cez t rez t wrh t wrp
15/15 ? semiconductor MSM51V65805 (unit : mm) package dimensions notes for mounting the surface mount type package the sop, qfp, tsop, soj, qfj (plcc), shp and bga are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. therefore, before you perform reflow mounting, contact okis responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). soj32-p-400-1.27 package material lead frame material pin treatment solder plate thickness package weight (g) epoxy resin 42 alloy solder plating 5 m m or more 1.42 typ. mirror finish

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